Publications

Journal papers

1. A. Habiboglu, B. Larsen, C. Webb, K. Svoboda, Y. Choudhary, M. Elekhtiar, C. Sullivan, J. O'Brien, C. Eckel, S. Hajirnis, S. Majetich, T. Adegbija, S. Zhang, E. Tsymbal, W. Wang. Momentum-dependent spin polarization based room-temperature tunneling magnetoresistance in PtMn_x based hybrid antiferromagnetic tunnel junctions. In preparation
2. A. Habiboglu, B. Larsen, J. Zhang, M. Chen, P. Khanal, B. Zhou, J. O'Brien, C. Eckel, S. Hajirnis, W. Wang. Implementation of antiferromagnetic barrier with high tunneling magnetoresistance: a pathway toward magnon-assisted spin-transfer torque switching. IEEE Transactions on Magnetics Under review
3. Y. Zhang, M. Xu, B. Zhou, C. Eckel, S. Ghosh, H. Yun, A. Habiboglu, D. Lyu, D. B. Gopman, J.-P. Wang, K. A. Mkhoyan, W. Wang. Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching. Science Advances vol. 12, eaef6328, 2026.
4. P. Khanal, B. Zhou, H. Almasi, A. Habiboglu, M. Andrade, J. O'Brien, A. Enriquez, C. Eckel, C. Mastrangelo, W.-G. Wang. Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions. Journal of Physics D: Applied Physics vol. 59, no. 24, 245001, 2026.
5. Y. Lv, B. R. Zink, R. P. Bloom, H. Cılasun, P. Khanal, S. Resch, Z. Chowdhury, A. Habiboglu, W. Wang, S. S. Sapatnekar, U. Karpuzcu, J.-P. Wang. Experimental demonstration of magnetic tunnel junction-based computational random-access memory. npj Unconventional Computing vol. 1, no. 1, 2024. Link
6. D. Lyu, J. E. Shoup, A. T. Habiboglu, Q. Jia, P. Khanal, B. R. Zink, Y. Lv, B. Zhou, D. B. Gopman, W. Wang, J.-P. Wang. L1₀ FePd-based perpendicular magnetic tunnel junctions with 65 percent tunnel magnetoresistance and ultralow switching current density. AIP Advances vol. 14, 025019, 2024.
7. A. Habiboglu, Y. Chandak, P. Khanal, B. Larsen, B. Zhou, C. Eckel, J. Cutshall, K. Warrilow, J. O'Brien, B. Hong, J. R. Schaibley, B. J. Leroy, W. Wang. The impact of boron doping in the tunneling magnetoresistance of Heusler alloy Co₂FeAl. Journal of Applied Physics vol. 134, no. 24, 2023.
8. M. Dc, D.-F. Shao, V. D.-H. Hou, A. Vailionis, P. Quarterman, A. Habiboglu, M. B. Venuti, F. Xue, Y.-L. Huang, C.-M. Lee, M. Miura, B. Kirby, C. Bi, X. Li, Y. Deng, S.-J. Lin, W. Tsai, S. Eley, W.-G. Wang, J. A. Borchers, E. Y. Tsymbal, S. X. Wang. Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd₃. Nature Materials vol. 22, no. 5, pp. 591 to 598, 2023.
9. B. Zhou, P. Khanal, O. J. Benally, D. Lyu, D. B. Gopman, A. Enriquez, A. Habiboglu, K. Warrilow, J.-P. Wang, W.-G. Wang. Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers. Scientific Reports vol. 13, 3454, 2023. Link
10. P. Khanal, B. Zhou, M. Andrade, C. Mastrangelo, A. Habiboglu, A. Enriquez, D. Fox, K. Warrilow, W.-G. Wang. Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl₂O₄ barrier. Journal of Magnetism and Magnetic Materials vol. 563, 169914, 2022.
11. P. Khanal, B. Zhou, M. Andrade, Y. Dang, A. Davydov, A. Habiboglu, J. Saidian, A. Laurie, J.-P. Wang, D. B. Gopman, W. Wang. Perpendicular magnetic tunnel junctions with multi-interface free layer. Applied Physics Letters vol. 119, no. 24, 2021. Link
12. M. Xu, M. Li, P. Khanal, A. Habiboglu, B. Insana, Y. Xiong, T. Peterson, J. C. Myers, D. Ortega, H. Qu, C. L. Chien, W. Zhang, J.-P. Wang, W. Wang. Voltage-controlled antiferromagnetism in magnetic tunnel junctions. Physical Review Letters vol. 124, no. 18, 187701, 2020. Link
13. V. Karakas, A. Gokce, A. T. Habiboglu, S. Arpaci, K. Ozbozduman, I. Cinar, C. Yanik, R. Tomasello, S. Tacchi, G. Siracusano, M. Carpentieri, G. Finocchio, T. Hauet, O. Ozatay. Observation of magnetic radial vortex nucleation in a multilayer stack with tunable anisotropy. Scientific Reports vol. 8, 7180, 2018.

Patent

14. A. Habiboglu, Y. Cheng, S. Zhang, W. Wang. Magnetic tunneling junctions with a magnetic barrier. US Patent US-12096698-B2, 2024. Reduces the switching energy by up to five times by putting heat that would otherwise be wasted to work through magnons.

Thesis